PART |
Description |
Maker |
M29DW324DB70ZA6 M29DW324DB70ZA6F M29DW324DB70ZE6F |
CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, RG225/U COAX, DOUBLE SHIELDED 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动3V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双1616分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory
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SGS Thomson Microelectronics 意法半导 STMicroelectronics N.V. ST Microelectronics
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M29W160EB70N1 M29W160EB70N1T M29W160EB70N6 M29W160 |
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位(含2Mb x8兆x16插槽,引导块3V电源快闪记忆 CAP 3300UF 6.3V ELECT FC RADIAL 16兆位(含2Mb x8兆x16插槽,引导块V电源快闪记忆 16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory 16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY 70ns; V(in/out): -0.6 to 0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory
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STMicroelectronics N.V. ST Microelectronics SGS Thomson Microelectronics
|
M36W432BG M36W432BG70ZA1T M36W432BG70ZA6T M36W432B |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
M29DW324DT M29DW324DB 8730 M29DW324DT90ZE6T M29DW3 |
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory From old datasheet system 32 MBIT (4MB X8 OR 2MB X16, DUAL BANK 16:16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
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STMICROELECTRONICS[STMicroelectronics]
|
M28W320EB-ZB M28W320EB-ZBT M28W320EBB M28W320EBB10 |
32MBIT (2MB X 16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
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SGS Thomson Microelectronics NUMONYX 意法半导 ST Microelectronics
|
M29W160EB M29W160EB70N6 M29W160EB70N6E M29W160EB70 |
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
M29W320DB70ZE1 M29W320DT M29W320DB |
32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory 32 MBIT (4MB X8 OR 2MB X16 BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMicroelectronics
|
M29KW032E90ZA6T M29KDCL3-32T M29KW032E M29KW032E11 |
From old datasheet system 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory 32 Mbit 2Mb x16 / Uniform Block 3V Supply LightFlash Memory 32 MBIT (2MB X16, UNIFORM BLOCK)3V SUPPLY LIGHTFLASHMEMORY 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M29DW323DB70N1 M29DW323DB70N1E M29DW323DB70N1F M29 |
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28 |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory 32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory Quadruple ESD transient voltage suppressor - Cd max.: 50 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V Quadruple ESD transient voltage suppressor - Cd max.: 200 pF; IRM max: 0.7A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 6.2 V; VRWM: 4 V
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意法半导 STMicroelectronics
|
M28W160ECT85N1T M28W160ECB85ZB1T M28W160ECB85N1T M |
16 Mbit (1Mb x16/ Boot Block) 3V Supply Flash Memory 16 Mbit (1Mbx16, Boot Block) 3V Supply Flash Memory 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory 16兆位兆x16插槽,引导块V电源快闪记忆
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ST Microelectronics STMicroelectronics N.V. 意法半导
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